| 发明名称 |
Surface treatment of darc films to reduce defects in subsequent cap layers |
| 摘要 |
The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprises providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silicon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.
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| 申请公布号 |
US2002009829(A1) |
申请公布日期 |
2002.01.24 |
| 申请号 |
US20010924759 |
申请日期 |
2001.08.08 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YIN ZHIPING;SANDHU GURTEJ SINGH |
| 分类号 |
G03F7/09;H01L21/027;H01L21/3105;H01L21/314;H01L21/3213;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
G03F7/09 |
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