N-TYPE NITRIDE SEMICONDUCTOR LAMINATE AND SEMICONDUCTOR DEVICE USING SAME
摘要
<p>An N-type nitride semiconductor laminate includes a substrate, a buffer layer made of AlaGa1-aN (0.05 ≤ a ≤ 0.8) which is formed on a surface of the substrate, and an n-side nitride semiconductor layer which is formed on the buffer layer.</p>
