METHOD FOR FORMING TITANIUM SILICIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a titanium silicide for a metal interconnection line and an ohmic contact between a silicon substrate is provided to permit control of composition and thickness of the titanium silicide. CONSTITUTION: An insulating layer(12) is formed on a substrate(10) and selectively etched to form a contact hole. Next, a titanium silicide layer(14) is formed on the insulating layer(12) by using an atomic layer epitaxy(ALE) CVD instead of a conventional PVD or CVD. During the ALE CVD, titanium chloride(TiCl4) is supplied as a source gas and sequentially silane(SiH4) is supplied as a reactant gas. After the titanium silicide layer(14) is formed, a titanium layer(16) is formed thereon by using hydrogen(H2) instead of silane as a reactant gas.