METHOD FOR FORMING BITLINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bitline of a semiconductor device is provided to maintain excellent electrical insulation between the bitline and a storage electrode by forming a spacer of a uniform thickness on the sidewall of the bitline, and to increase a process margin in a process for forming a contact hole for the storage electrode by making the sidewall of the spacer have a vertical shape. CONSTITUTION: A conductive layer and an etch barrier layer(20) are sequentially formed on a semiconductor substrate having an insulation layer. The etch barrier layer and the conductive layer are sequentially patterned to form the bitline(17), and a nitride layer(21) is formed on the entire surface. After an ion implantation process is performed to make an etch target portion of the nitride layer amorphous, the nitride layer is blank-etched to form the spacer(21a) of the uniform thickness on the sidewall of the bitline.