Method of fabricating gate structure of semiconductor device for repairing damage to gate oxide layer

摘要

A method of fabricating a gate of a semiconductor device, by which damage to a gate oxide layer is repaired, is provided. In an aspect of the method, a gate oxide layer is formed on a semiconductor substrate. A conductive layer containing silicon is formed on the gate oxide layer. A stacked structure with a polycrystalline silicon layer and a dichlorosilane-family tungsten silicide layer can be used as the conductive layer. A gate is formed by patterning the conductive layer. A silicon source layer which covers the sidewall of the gate is formed by selective epitaxial growth of silicon. The silicon source layer is grown to a thickness of about 200 Å or less. The silicon source layer is thermally treated at an oxidation atmosphere, thus repairing damage to the gate oxide layer.