| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a desired patterning of a conductive film can be formed, regardless of the pattern of a resist film. SOLUTION: In a method for manufacturing a semiconductor device, in which a connection hole reaching a patterned conductive film is formed, a conductive film 302 having a comformable characteristic is laminated on an insulation film 301 in which a recessed part 301a for forming a connection hole is formed, and a antireflection film 303, which has a different etching characteristic from a conductive film 302 as well as no comformable characteristic is laminated thereon, and then a patterned resist film 304 is formed. The resist film 304 is used as a mask and the antireflection film 303 is etched, in a condition such that the widthwise dimension during excessive etching becomes smaller than that during normal etching, and the conductive film 302 is further etched while the antireflection film 303 is used as a mask, to form the patterned conductive film 302.
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