METHOD OF INTEGRATING SUBSTRATE CONTACT ON SOI WAFERS WITH STI PROCESS

摘要

A method for forming a substrate contact in a substrate that includes a silicon on insulator region. A shallow isolation trench is formed in the silicon on insulator substrate. The shallow isolation trench is filled. Photoresist is deposited on the substrate. A contact trench is formed in the substrate through the filled shallow isolation trench, silicon on insulator, and silicon substrate underlying the silicon on insulator region. The contact trench is filled, wherein the material filling the contact trench forms a contact to the silicon substrate.