| 摘要 |
PURPOSE: To facilitate scale down of a semiconductor device by respectively forming a contact plug to the predetermined contact hole amount a plurality of contact holes and a first wiring layer on the remaining contact holes with single dry-etching process of the one conductive film. CONSTITUTION: An element isolation region 2 is formed in the predetermined region at the surface of a silicon substrate 1 and moreover a gate insulation film 3 is also formed. On the gate insulation film 3, a gate electrode 4 is covered with a protection insulation film 5 to form diffused layers 6, 6a in the region located between the gate electrodes 4. A first conductive layer 8 is formed in such a manner as being connected with the diffused layer 6 as the wiring layer in the contact hole formed in the region including a first interlayer insulation film 7. Moreover, a contact plug 9 is formed in such a manner as being connected with the diffused layer 6a in the contact hole formed in the region including the first interlayer insulation film 7. There first conductive layer 8 and contact plug 9 are processed with single dry-etching process.
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