| 摘要 |
PROBLEM TO BE SOLVED: To uniformly deposit in a large area a surface layer consisting of a -C:H film or a -C:F film having high hardness and excellent surface properties without sacrificing the electric characteristics. SOLUTION: When a photoconductive layer consisting of a non-single crystal material essentially comprising silicon atoms and a surface layer consisting of non-single crystal carbon containing hydrogen or halogen are successively formed on a substrate in a plasma CVD device equipped with a ventilation system in the lower part, the temperature of the whole substrate 2112 is made uniform by controlling the heat generation of a sheath heater (a) uniformly wound on a heater 2113 for heating the substrate while monitoring the temperature of the heater (a) by a temperature detecting means 2124 during forming the photoconductive layer, and further, to form the surface layer, the sheath heater (a) is turned off and then a sheath heater (b) is turned on.
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