PLASMA PROCESSING DEVICE AND PROCESSING METHOD

摘要

A plasma processing device comprising an annular segment magnet disposed around the periphery of the upper region of a chamber for forming a magnetic field around the periphery of a processing space, the magnet being rotatable along the circumferential direction of the chamber by a rotation mechanism , a magnetic field forming means forming a magnetic field around the periphery of the processing space while the position of existence of a substrate to be processed is put in a state which is substantially free from magnetic field so as to prevent charge-up damage, wherein the effect of such plasma confinement by magnetic filed makes the plasma processing rate in the substrate substantially equal between the edge and central region of the substrate, thereby making the processing rate uniform. The magnet of the magnetic field forming means is divided into two pieces, and a turning mechanism is incorporated for changing the spacing between the pieces or changing the direction of magnetization.