| 摘要 |
A memory device having reduced power consumption by minimizing the operation of circuits utilized in reading and writing data, and a data reading and writing method of the memory device, are provided. In the memory device, upon data reading, an input and output sense amplifier amplifies data which is read from a memory cell and transferred to an input and output line, and transfers the resultant data to a data output line. Upon data writing, a writing driver receives write data via a data input line and transfers the received write data to the input and output line. Each of the input and output sense amplifier and the writing driver operates only when previously-read or -written data is different from current data to be read or written.
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