| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which suppresses faulty contact based on the coverage deficiency of its wiring caused by a fine connection hole. SOLUTION: The manufacturing method of a semiconductor device comprises a step for forming a first Al alloy film on an insulation film 1, a step for forming a metal stopper layer 2 on the first Al alloy film, a step for forming a second Al alloy film on the metal stopper layer, a step for forming a lower- layer wiring 3a made of the first Al alloy film by etching the first and second Al alloy films and the metal stopper layer, a step for so etching the second Al alloy film by using as an etching stopper the metal stopper layer as to form a connection member 7a made of the second Al alloy film on the metal stopper layer, a step for forming an interlayer insulation film 5 on the lower- layer wiring and on the connection member, and a step for so exposing to the external the upper portion of the connection member by subjecting the interlayer insulation film to an etching-back or to a CMP polishing as to form an upper-layer wiring 8 on the connection member.
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