发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR PRESSURE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor pressure sensor capable of manufacturing a high sensitive semiconductor pressure sensor capable of detecting a minute pressure without increasing a chip size. SOLUTION: A method for manufacturing a semiconductor pressure sensor comprises the steps of forming a distortion sensing element in a silicon wafer; joining a capping substrate forming an opening gap coating the distortion sensing element and a silicon wafer; etching or polishing an opposite side surface to a surface forming the distortion sensing element in the silicon wafer joined to the capping substrate to thin a thickness of the silicon wafer; joining a pedestal substrate to an opposite side surface to the surface forming the distortion sensing element in the silicon wafer; and dicing in chip unit.
申请公布号 JP2001332746(A) 申请公布日期 2001.11.30
申请号 JP20000154137 申请日期 2000.05.25
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SAITO HIROSHI;AKAI SUMIO;KATAOKA KAZUSHI
分类号 G01L9/04;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L9/04
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