发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR PRESSURE SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor pressure sensor capable of manufacturing a high sensitive semiconductor pressure sensor capable of detecting a minute pressure without increasing a chip size. SOLUTION: A method for manufacturing a semiconductor pressure sensor comprises the steps of forming a distortion sensing element in a silicon wafer; joining a capping substrate forming an opening gap coating the distortion sensing element and a silicon wafer; etching or polishing an opposite side surface to a surface forming the distortion sensing element in the silicon wafer joined to the capping substrate to thin a thickness of the silicon wafer; joining a pedestal substrate to an opposite side surface to the surface forming the distortion sensing element in the silicon wafer; and dicing in chip unit.
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申请公布号 |
JP2001332746(A) |
申请公布日期 |
2001.11.30 |
申请号 |
JP20000154137 |
申请日期 |
2000.05.25 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
SAITO HIROSHI;AKAI SUMIO;KATAOKA KAZUSHI |
分类号 |
G01L9/04;H01L29/84;(IPC1-7):H01L29/84 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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