发明名称 METHOD FOR RECLAIMING A DELAMINATED WAFER
摘要 <p>In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer. <IMAGE></p>
申请公布号 EP1156531(A1) 申请公布日期 2001.11.21
申请号 EP20000977956 申请日期 2000.11.27
申请人 SHIN-ETSU HANDOTAI COMPANY LIMITED;S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 KUWABARA, SUSUMU;MITANI, KIYOSHI;TATE, NAOTO;NAKANO, MASATAKE;BARGE, THIERRY;MALEVILLE, CHRISTOPHE
分类号 H01L21/306;H01L21/762;H01L21/02;H01L21/66;H01L23/544;H01L27/12;(IPC1-7):H01L27/12 主分类号 H01L21/306
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