发明名称 |
METHOD FOR RECLAIMING A DELAMINATED WAFER |
摘要 |
<p>In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer. <IMAGE></p> |
申请公布号 |
EP1156531(A1) |
申请公布日期 |
2001.11.21 |
申请号 |
EP20000977956 |
申请日期 |
2000.11.27 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED;S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
KUWABARA, SUSUMU;MITANI, KIYOSHI;TATE, NAOTO;NAKANO, MASATAKE;BARGE, THIERRY;MALEVILLE, CHRISTOPHE |
分类号 |
H01L21/306;H01L21/762;H01L21/02;H01L21/66;H01L23/544;H01L27/12;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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