发明名称 PROCESSING CHAMBER
摘要 PROBLEM TO BE SOLVED: To provide a processing chamber with increased throughput by separating at least a part of an evacuation path with the divided part disposed on the lower chamber, and by setting a position where an upper chamber and a lower chamber is separated, near a wafer placement surface of a wafer stage to shorten the distance between the upper and lower chambers when the lower chamber is opened. SOLUTION: In order to perform ashing in a vacuum state, the evacuation path is made separable at least in a part of it in a process chamber comprising the lower chamber provided with the wafer stage and the upper chamber overlapping the upper chamber, The separated part of the evacuation path is so configured as to move along with the lower chamber. The position where the evacuation path is separated is not only nearly at the same level as the opening and closing level of the lower chamber, but also at a level near the wafer placement surface of the wafer stage.
申请公布号 JP2001319921(A) 申请公布日期 2001.11.16
申请号 JP20000136117 申请日期 2000.05.09
申请人 CANON INC 发明人 NAKAHARA TAKASHI
分类号 H01L21/302;C23C16/44;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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