| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a transparent electrode substrate equipped with a thin film transistor composed of amorphous silicon or poly-silicon keeping an excellent displaying performance over a long period, a method for manufacturing the same and a liquid crystal device utilizing the transparent electrode substrate. SOLUTION: The transparent electrode substrate comprises a gate electrode, a gate insulation layer, a first semiconductor layer, a second semiconductor layer, source and drain electrodes and a pixel electrode laminated on the transparent substrate in this order. An aluminum nitride compound layer is formed on the gate electrode and the source and drain electrodes. The transparent electrode substrate comprising the pixel electrode formed of a conductive oxide layer containing two or more kinds of compounds selected out of indium oxide, tin oxide and zinc oxide as main components on the aluminum nitride compound layer, the method for manufacturing the transparent electrode substrate by successively forming those respective layers and the liquid crystal device comprising the transparent electrode substrate and a liquid crystal cell or a liquid crystal layer are provided.</p> |
