COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

The compound semiconductor light emitting device can keep the effect of confining carrier into an active layer and improve light emission efficiency. In the device having the first conductive type substrate 11; the active layer 12 on the first conductive type substrate 11; the second conductive type sub-layer 15 and the first conductive type sub-layer 17, in this order from the lower to the upper, on the first conductive type substrate 11 and at both sides of the active layer 12; the second conductive type cladding layer 19 on/over the active layer 12 and the first conductive type sub-layer 17; and the second conductive type contact layer 21 on the second conductive type cladding layer 19; the p-type diffusion barrier layer 23 is further formed between the n-type sub-layer 17 and the p-type cladding layer 19.