| 发明名称 |
Vertically integrated semiconductor component |
| 摘要 |
A vertically integrated semiconductor component is provided with component levels disposed on different substrates. The substrates are joined by a connecting layer of benzocyclobutene and an electrical connection is provided between component levels by a vertical contact structure. A low-stress gluing is provided by the benzocyclobutene connecting layer.
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| 申请公布号 |
US6313517(B1) |
申请公布日期 |
2001.11.06 |
| 申请号 |
US20000663462 |
申请日期 |
2000.09.15 |
| 申请人 |
SIEMENS AKTIENGESELLSHAFT |
发明人 |
LAUTERBACH CHRISTL;WEBER WERNER |
| 分类号 |
H01L21/58;H01L21/768;H01L21/98;H01L23/48;H01L23/522;H01L23/532;H01L25/065;H01L27/00;(IPC1-7):H01L29/40;H01L23/58 |
主分类号 |
H01L21/58 |
| 代理机构 |
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