SEMICONDUCTOR ELEMENT AND FORMING METHOD THEREOF

摘要

PURPOSE: To provide an FET where an inverse short channel effect is reduced as well as a method for forming it. CONSTITUTION: Germanium is so implanted over the entire semiconductor substrate at an appropriate intensity and quantity that a peak ion concentration is generated under the source and drain of the FET. The germanium is implanted before the gate, source, and drain are formed, so an inversion short channel effect which is shown with normal FETs is reduced. The short channel effect occurring with the normal FETs is never affected by implantation of germanium.