| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems of decrease in a throughput of dicing, as a result of unavoidable adopting a complicated dicing technology due to the presence of a metal pattern formed on a cutting region of a semiconductor wafer, adverse effects of a cutout or the like occurring on the main surface and a rear surface of the outer periphery of the cut region, the so-called chipping to a semiconductor chip, when the cutting region is intended to be simply cut, an occurrence of a cutting residue of a pad or the like for a TEG, even after a cutting step and an occurrence of a short circuit fault. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of removing parts of a film of the cutting region 3 of the semiconductor wafer and the wafer by etching, and then cutting the wafer by dicing. |
