| 摘要 |
<p>A sputter target comprising a Ti-Al alloy containing 1-30 atm% of Al, wherein Al exists in at least one of solid solution state in Ti or a state forming an intermetallic compound with Ti and variation in the content of Al is limited to within 10% for the entire target. Furthermore, the Ti-Al alloy has average crystal grain size of 500 µm or less and variation of crystal grain size is limited to within 30% for the entire target. A Ti-Al-N film is formed as a barrier film using a sputter target comprising such a Ti-Al alloy. An electronic component comprises a barrier film formed on a semiconductor substrate.</p> |
