发明名称 Crystal growth and annealing method and apparatus
摘要 A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing. An embodiment of the present invention comprises a secondary heater incorporated into a conventional crystal growth and annealing apparatus. The secondary heater supplies heat to minimize the temperature gradients in the crystal during the annealing process. The secondary heater can mount near the bottom of the crucible to effectively maintain appropriate temperature gradients.
申请公布号 US6309461(B1) 申请公布日期 2001.10.30
申请号 US19990327043 申请日期 1999.06.07
申请人 SANDIA CORPORATION;CORNING, INCORPORATED 发明人 GIANOULAKIS STEVEN E.;SPARROW ROBERT
分类号 C30B29/12;C30B11/00;C30B33/00;(IPC1-7):C30B35/00 主分类号 C30B29/12
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