| 摘要 |
A microelectronic structure that is suitable, in particular, as part of a storage capacitor includes a semiconductor structure, a barrier structure, an electrode structure, and a dielectric structure made of a high-epsilon material. The electrode structure has a tensile mechanical layer stress. The microelectronic structure is fabricated, in particular, by sputtering platinum in order to form the electrode structure at a sputtering temperature of at least 200° C.
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