发明名称 |
Method for forming a multilevel interconnect |
摘要 |
A metallization method for forming multilevel interconnect is disclosed. The method includes firstly providing a first conductor layer on which there is a dielectric layer. A glue layer is then formed on the dielectric layer, followed by forming an opening from top surface of the glue layer to the first conductor layer. After forming a barrier layer on the glue layer and all surfaces in the opening, a second conductor is formed on the barrier layer and fills the opening. Subsequently, the second conductor layer and the barrier layer are removed until the glue layer exposes. A third conductor is defined on the glue layer and the second conductor. The product will solve the problem of high via resistivity caused by stripping solvent and etchant.
|
申请公布号 |
US6306757(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US19990323890 |
申请日期 |
1999.06.02 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG KEH-CHING;YANG MING-SHENG;CHEN TONG-YU;JUNG TZU-GUEY |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|