发明名称 |
HALL-EFFECT ELEMENT WITH INTEGRATED OFFSET CONTROL AND METHOD FOR OPERATING HALL-EFFECT ELEMENT TO REDUCE NULL OFFSET |
摘要 |
A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of contacts is disposed in contact with the surface along a first axis, and a second set of contacts is disposed in contact with the surface along a second axis transverse to the first axis. An insulating layer is disposed on the surface. A metal control field plate is disposed on the insulating layer and is coupleable to a voltage source to control the accumulation of charge carriers at the surface of the active layer to vary the resistance of the active layer. Also, a method is provided for reducing null offset in a Hall-effect element. The method includes the steps of providing an isolating layer, disposing an active layer of a first electrical conductivity type on the isolating layer, the active layer having a surface, disposing a first set of contacts on the surface along a first axis, disposing a second set of contacts on the surface along a second axis transverse to the first axis; and disposing an insulating layer on the surface. A voltage is applied across the insulating layer to control the accumulation of charge carriers at the surface to vary the resistance of the active layer.
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申请公布号 |
WO0174139(A2) |
申请公布日期 |
2001.10.11 |
申请号 |
WO2001US10951 |
申请日期 |
2001.04.04 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
PLAGENS, MARK, R.;MATGER, WALTER, T.;HAJI-SHEIKH, MICHAEL, J. |
分类号 |
H01L43/06;G01R33/07;H01L27/22;H01L43/08 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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