THERMAL CONDUCTIVITY ENHANCED SEMICONDUCTOR STRUCTURE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure wherein the thermal conductivity is enhanced, and its manufacturing method. SOLUTION: During manufacturing of selected electronic components, silicon is formed at selected position on a substrate. Dielectric isolation regions are formed in an upper silicon layer and filled with a thermal conductive material. Before depositing the thermal conductive material, a liner material may be deposited at option. In a second embodiment, a horizontal layer of the thermal conductive material is deposited in an oxide layer or bulk silicon layer beneath the upper silicon layer.