| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency switching element having a high breakdown voltage wherein a large current is quickly cut off with a small gate current by applying a large reverse gate voltage even if the impurity concentration in a channel region is low for pinching off the channel region quickly, related to an electrostatic induction thyristor provided with a low-resistance cathode short region for directly discharging accumulated carries in a drain region and channel region into the cathode electrode when turned off. SOLUTION: Along the entire peripheral part of an island region surrounded by a recess 14 on one surface of an n-type silicon substrate 11, a p-type gate region 13, a gate electrode 21 contacting it, a p-type cathode short region 15 surrounded by the gate region, an n-type cathode region 18, and a cathode electrode 22 contacting the cathode region and the cathode short region, and formed. A depletion layer suppressing layer 16 which is of the same n-type as the silicon substrate with impurity concentration higher than it is formed between the cathode short region and the silicon substrate surrounded by the gate region.
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