METHOD FOR ETCHING SIDEWALL POLYMER AND OTHER RESIDUES FROM THE SURFACE OF SEMICONDUCTOR DEVICES

摘要

A method for removing organic and inorganic residues or polymers from the surface of semiconductor devices, with a combination of etchant gasses including water vapor generated using a catalytic moisture generator (CMG). The water vapor is generated by introducing O2 and an H2 containing forming gas including hydrogen and at least one dilutant gas into the CMG. The water vapor from the CMG is introduced into a reaction chamber with other etchant gasses to treat the surface of a semiconductor device placed within. The flow rate of water vapor out of the CMG and into the reaction chamber may be controlled by controlling the flow rate of the H2 containing forming gas and the flow rate of the O2 gas into the CMG.