发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device of high heat dissipation suited to cutting into individual pieces in the final stage of assembling through the use of a frame, where spreading of adhesive applied for adhering semiconductor chips is suppressed and the plural semiconductor chips are matrix-arranged, and the semiconductor device obtained by the method. SOLUTION: The method for manufacturing the semiconductor device has at least a stage for providing an upper groove at one side of a metallic plate of a heat spreader, a stage for adhering a board having a wiring layer to the metallic plate and filling the upper groove with resin, and a stage for forming a lower groove at the other surface of the metallic plate to connect the upper and lower grooves. The semiconductor device is obtained by the method defined above.
申请公布号 JP2001267478(A) 申请公布日期 2001.09.28
申请号 JP20000081675 申请日期 2000.03.17
申请人 HITACHI CHEM CO LTD 发明人 FUKUTOMI NAOKI
分类号 H01L23/12;H01L21/52;H01L23/29;H01L23/36 主分类号 H01L23/12
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