| 摘要 |
A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad forming section formed thereon. A primary insulating film is formed on the substrate so as to continuously cover the mesa section and the bonding pad forming section. After a mask has been formed on a portion of the primary insulating film that is above the bonding pad forming section, the remaining portion of the primary insulating film is etched off, followed by removal of the mask. After the removal of the mask, a secondary insulating film is formed so as to continuously cover that portion of the primary insulating film above the bonding pad forming section and the mesa section so that a relatively thick insulating layer can be formed only above the bonding pad forming section.
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