Verfahren zur Herstellung eines Halbleiter-Kristalls und Halbleiteranordnung,申请号DE19936030583-传众专利搜索

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发明名称	Verfahren zur Herstellung eines Halbleiter-Kristalls und Halbleiteranordnung
摘要
申请公布号	DE69330583(D1)	申请公布日期	2001.09.20
申请号	DE19936030583	申请日期	1993.06.22
申请人	SONY CORP., TOKIO/TOKYO	发明人	SAMESHIMA, TOSHIYUKI;HARA, MASAKI;SANO, NAOKI;PAL, GOSAIN DHARAM;KONO, ATSUSHI;WESTWATER, JONATHAN;USUI, SETSUO
分类号	H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/76	主分类号	H01L21/02
代理机构		代理人
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