发明名称 |
Method for fabricating passivated semiconductor devices |
摘要 |
A wafer-level process for fabricating a plurality of passivated semiconductor devices comprising the steps of providing a semiconductor wafer on that at least one p-n junction is formed, Cutting a plurality of grooves in said wafer to expose said at least one p-n junction, wherein each of said grooves extends partly through the wafer and has a depth that is enough to expose said at least one p-n junction, applying a passivating material into said grooves and curing the material. The grooves can be formed by using a disc saw having a blade, by performing a sandblasting operation within a controlled operation time, or by performing a photolithographically chemical etching process. The passivating material is either screen-printed or pin-dispensed into the grooves. A dicing operation can be subsequently proceeded to divide the wafer into individual chips for subsequent fabrication into completed semiconductor devices.
|
申请公布号 |
US6291316(B1) |
申请公布日期 |
2001.09.18 |
申请号 |
US19990233706 |
申请日期 |
1999.01.19 |
申请人 |
GENERAL SEMICONDUCTOR OF TAIWAN, LTD |
发明人 |
KNOWLES CHRISTOPHER MICHAEL;LIN YIH-YIN;LIN TUNG-CHIEH;NELSON WILLIAM JOHN;TSAI HUNG-PING;O'ROURKE RICHARD SEAN |
分类号 |
H01L21/306;H01L21/329;H01L21/56;H01L21/762;H01L23/31;(IPC1-7):H01L21/46;H01L21/78;H01L21/301;H01L21/76;H01L21/31 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|