| 摘要 |
Production of ceramic layers, especially carbide layers, on a substrate (8), especially silicon, comprises feeding ceramic particles to the substrate using a transfer medium, especially a melt (3). The transfer medium is enriched with ceramic particles by heating a ceramic part, which is held in areas outside of the transfer medium, to a high temperature, and moving the ceramic part and the transfer medium in relation to one another during the method. An Independent claim is also included for a device for producing ceramic layers, especially silicon, on a substrate comprising a holder (15) for one part (9, 10) with ceramic material, and an arrangement for moving the ceramic part and the melt against one another.
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