METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method for fabricating a semiconductor device having different thickness gate insulating films, which can form the different thickness insulating films while ensuring reliability of the gate insulating films and film thickness difference. CONSTITUTION: The semiconductor device is fabricated by a process of selectively introducing halogen element or argon to an element region 14 of a silicon substrate 10 and a process of forming a silicon oxide film 24 over an element region 16 and a silicon oxide film 22, which is thicker than film 24, over the element region 14 by wet oxidation of the substrate 10 under the reduced pressure or the diluted atmosphere by nitrogen or rare gas.