发明名称 |
Method of forming a contact hole in a semiconductor substrate using oxide spacers on the sidewalls of the contact hole |
摘要 |
A method of forming a contact hole in a semiconductor device is provided wherein an oxide spacer is formed over a contact hole. The oxide contact hole spacer prevents an already-formed gate protecting spacer comprised of silicon nitride from being etched during a subsequent step of removing the already-formed silicon nitride etching stopper. After forming a gate stack having the protecting spacer, the silicon nitride etching stopper is formed. An interlayer insulating layer is formed thereon and a selected portion of the interlayer insulating layer is etched to form a contact hole. The oxide spacer is formed on both sidewalls of the contact hole and then the etching stopper silicon nitride layer is removed.
|
申请公布号 |
US2001019866(A1) |
申请公布日期 |
2001.09.06 |
申请号 |
US20010783044 |
申请日期 |
2001.02.15 |
申请人 |
JANG SOON-KYOU |
发明人 |
JANG SOON-KYOU |
分类号 |
H01L21/8242;H01L21/02;H01L21/28;H01L21/311;H01L21/768;H01L27/108;(IPC1-7):H01L21/824;H01L21/44 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|