| 摘要 |
An object of the present invention is to provide a wire saw cutting method that is a method for cutting a plurality of silicon monocrystal ingots into wafers with a wire saw, wherewith high-precision cutting processing is possible, reducing wafer thickness and warping defects, etc. By shifting the positions of pieces of work in the cutting feed direction, providing time differentials to the cuts, and cutting the work sequentially, the work cut first is given the role of a wire guide, making it possible to stabilize the path of the wire. Thus cuts can be made in other ingots with the wire path stabilized, it becomes possible to reduce thickness and warping defects, and processing is made possible wherewith good wafer quality and stable yield are realized.
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