| 摘要 |
PROBLEM TO BE SOLVED: To obtain a fundamental transverse mode oscillation up to the high output by increasing a difference in an equivalent refractive index, in a semiconductor laser device having an inner current narrowing structure. SOLUTION: On an n-type GaAs substrate, an n-Inx8Ga1-x8P lower clad layer 2, n- or i-Inx2Ga1-x2As1-y2Py2 optical wave guide layer 3, Inx2Ga1-x2As1-y2Py2 compression strain quantum well active layer 4, p- or i-Inx2Ga1-x2As1-y2Py2 optical wave guide layer 5, p-Inx8Ga1-x8P first upper clad layer, p-Inx1Ga1-x1 As1-y1Py1 etching block layer 7, and n-Inx8Ga1-x8P current narrowing layer 8 are deposited in layer in a thickness of 1μm, and a GaAs cap layer 9 is deposited in a thickness of 10 nm. Then, an SiO2 film 10 is formed on the GaAs cap layer 9, and a part of the SiO2 film 10 in a stripe region is removed by a width of about 3μm. After etching the GaAs cap layer 9 and n-Inx8Ga1-x8P current narrowing layer 8, the SiO2 film 10 is removed, and then the GaAs cap layer 9 and a part of the Inx1Ga1-x1As1-y1Py1 etching block layer 7 at the bottom of the recess are removed. Thereafter, a p-Alz4Ga1-z4As second upper clad layer 11 and a p-GaAs contact layer 12 are formed.
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