| 摘要 |
PROBLEM TO BE SOLVED: To easily obtain temperature uniformity on a susceptor that is simple in structure, in a substrate processing apparatus. SOLUTION: In a substrate-processing apparatus, that has a susceptor 20 on which a substrate 16 to be processed is placed, and a panel heater 6 on which the susceptor is placed and which heats the susceptor and that processes a substrate by generating plasma under reduced pressure, the heat transfer rate in the thickness direction of the susceptor is made large in peripheral part and small in central part by forming a central empty space in the central part of the susceptor and a peripheral empty space, that is concentric with the central empty space, where the pressure of the gas enclosed in the peripheral empty space is higher than that in the central empty space.
|
