Controllable semiconductor switch element made from an insulating material for being controlled by field effect has wiring zones of a first wiring type on an electrically insulating area and a blocking zone a second wiring type.

摘要

First (10) and second (12) wiring zones of a first wiring type fit on an electrically insulating area (20). A blocking zone (14) of a second wiring type fits on the insulating area between the first and second wiring zones. A control electrode (40) adjacent to the blocking zone controls the creation of a guiding channel in the blocking zone. A recombination area (30) fits in and/or next to the blocking zone.