| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD system in which the deposition of products causing the defect of the operation of a pressure control valve is eliminated, and the operation of the pressure control valve can smoothly be performed. SOLUTION: This system has a process chamber 2 to be loaded with a wafer 1, a heater 3 heating the loaded wafer 1 and a shower head 4 introducing film deposition gas and cleaning gas for etching in the process chamber 2 after film deposition treatment. Moreover, the exhaust of the inside of the process chamber 2 is performed by a pump 5, an exhaust line between the process chamber 2 and the pump 5 is provided with a pressure control valve 6 performing the control of the pressure in the process chamber 2, and an invartor 8 changing the output of the pump 5 in accordance with the setting of a system controller 7 is provided.
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