发明名称 POLISHING METHOD FOR SEMICONDUCTOR CRYSTAL WAFER AND SEMICONDUCTOR WAFER OBTAINED BY THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polishing method for a semiconductor crystal wafer capable of substantially extending the usage life of a polishing cloth used for mirror polishing of the semiconductor crystal wafer, and accordingly substantially improving quality, yield and productivity of a mirror polished semiconductor crystal wafer, when manufacturing a mirror polished semiconductor wafer by applying mirror polishing to the semiconductor crystal slice wafer by a mirror polishing device, and to provide a semiconductor crystal wafer obtained by this polishing method. SOLUTION: In this polishing method for a semiconductor crystal wafer, after sticking a coarsely polished semiconductor crystal slice wafer onto the sticking plate of a mirror polishing device, a surface plate formed by sticking an abrasive cloth onto the coarsely polished semiconductor crystal slice wafer is brought into contact with it, and after that, mechanochemical polishing is applied to it while pouring polishing liquid to make a mirror polished semiconductor crystal wafer. This polishing method for the semiconductor crystal wafer has a feature that a deflection resistant sticking plate having a diameter and a thickness satisfying the formula below is used for the aforementioned sticking plate.
申请公布号 JP2001198812(A) 申请公布日期 2001.07.24
申请号 JP20000013942 申请日期 2000.01.18
申请人 HITACHI CABLE LTD 发明人 IKEDA TAKESHI;TANI TAKEHIKO;UEMATSU EI
分类号 B24B37/30;C30B33/00;H01L21/304 主分类号 B24B37/30
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