发明名称 Magneto-resistive element production method
摘要 <p>When etching an MR thin film, a resist layer is formed into a shape having an under cut or an inverse taper shape. Moreover, when forming an electrode layer, an incident angle of sputter particles is adjusted. This enables to successively form a pair of bias layers and a pair of electrode layers with a single lift-off. <IMAGE></p>
申请公布号 EP1117091(A2) 申请公布日期 2001.07.18
申请号 EP20010100259 申请日期 2001.01.03
申请人 SONY CORPORATION 发明人 SHOJI, MITSUHARU
分类号 G11B5/39;G11B5/31;H01L43/12;(IPC1-7):G11B5/39;G01R33/09;H01L43/08 主分类号 G11B5/39
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