发明名称 WAFER BAND-EDGE MEASUREMENT USING SPECTROSCOPY AND A PROCESS OF UNIFORM WAFER TEMPERATURE CONTROL
摘要 <p>A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.</p>
申请公布号 WO2001050109(A2) 申请公布日期 2001.07.12
申请号 US2001000003 申请日期 2001.01.05
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