| 摘要 |
PURPOSE: A method for fabricating a T-gate of a semiconductor device is provided, which can fabricate the T-gate with low costs with a conventional process without using an electron beam. CONSTITUTION: A dummy pattern is formed on a substrate(201), and an insulation film(203) is formed with a silicon nitride on the substrate and the dummy pattern. The first photo resist is formed on the insulation film to reveal the insulation film on the dummy pattern. The first open aperture part is formed by removing a region on the revealed insulation film, the first photo resist and the dummy pattern in turn. After forming the second photo resist(205) on the substrate, the second photo resist is patterned to have the second open aperture part larger than the first open aperture part. And, a gate electrode is formed by filling the first and the second open aperture part with a metal(206). And, after forming the gate electrode, the films except the substrate and the gate electrode are remove through a lift-off process.
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