发明名称 REFRESH CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY
摘要 PURPOSE: A refresh control circuit of a semiconductor memory is provided to minimize a refresh current and power consumption. CONSTITUTION: The refresh control circuit includes a fuse(100), a self refresh controller(110), an auto refresh controller(120), a refresh counter(130), and a bank selector(140). The fuse selects the number of banks to be refreshed and the address by a combination of fuse cutting. The self refresh controller controls the refresh operation of the address of the bank to be refreshed which is set through the fuse value at a predetermined period by an outer refresh command. The auto refresh controller controls the refresh operation of the address of the bank to be refreshed which is set by the fuse value. The refresh counter outputs the address to be refreshed selectively by a control signal of the self and auto refresh controllers. The bank selector outputs a bank select signal to select the bank to be refreshed.
申请公布号 KR20010064492(A) 申请公布日期 2001.07.09
申请号 KR19990064695 申请日期 1999.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JU HYEON
分类号 G11C11/406;(IPC1-7):G11C11/406 主分类号 G11C11/406
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