| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to improve a characteristic and reliability of a semiconductor device by minimizing a reverse short-channel effect to reduce characteristic degradation of the semiconductor device. CONSTITUTION: An isolation layer(1) for defining an active region is formed on a semiconductor substrate(30). A gate electrode is formed by laminating a gate insulating layer(2), the first polysilicon(3), a tungsten silicide, and a mask insulating layer(4). A low density N-type dopant junction region is formed by implanting low density N-type dopant ions into the semiconductor substrate(30). A CVD oxide layer(7) is formed on the whole surface. An insulating layer spacer is formed at a sidewall of the gate electrode by etching the CVD oxide layer(7) of a cell region(100). The second polysilicon(14) is formed on the whole surface. A contact pad is formed on a contact region by patterning the second polysilicon(14) of the cell region. The second polysilicon spacer is formed at a sidewall of the CVD oxide layer(7) by etching the second polysilicon(14) of a peripheral circuit region. The second polysilicon spacer is removed from the peripheral circuit region. An NMOS is formed by implanting high density N-type dopant ions on an NMOS region(200a) of the peripheral circuit region. An insulating layer spacer is formed by etching the CVD oxide layer(7) of a PMOS region(200b) of the peripheral circuit region. A PMOS is formed by implanting high density P-type dopant ions on the PMOS region(200b) of the peripheral circuit region.
|
