| 摘要 |
PURPOSE: A forming method of semiconductor device arranger is provided to flatten around the arranger, and to remove a nitride layer completely. CONSTITUTION: A pad oxide layer(12) and a nitride layer(13) are formed on a semiconductor substrate(11). Many trenches are built on an arranger region (A) and a dummy region(C) in the substrate(11). The width and the gap of trench pattern are 0.5 or 1 micrometer, and the length is 1 or 10 millimeters. A high-density of plasma oxide layer(14) covers the whole structure. The high-density of plasma oxide layer(14) on the arranger region(A) and the dummy region(C) have a same thickness. To fill the trenches, a CMP(Chemical Mechanical Polish) method is executed until the nitride layer(13) is exposed. Using a phosphoric acid solution, the nitride layer is etched and removed completely. The borders of arranger region(A), around the arranger region(B), and the dummy region(C) on the substrate(11) are cleared.
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