| 摘要 |
PURPOSE: A method is provided to form an isolation film having a semiconductor device with a micro line width without any additional costs rise. CONSTITUTION: A silicon substrate(30) is dipped into a HF solution to remove an oxide on the silicon substrate. Then, a surface of the silicon substrate is passivated. After changing an AFM(Automatic Force Microscopy) into a non-contact mode, the topology of the surface of the silicon substrate is obtained. And the AFM facility is changed into a contact mode. Then, an isolation region of the silicon substrate is scratched using a silicon nitride tip to form a groove on the surface of the silicon substrate. Then, the silicon substrate formed with the groove is dipped into a KOH solution of 50-100 deg.C to form an isolation film(32). Then, the surface of the silicon substrate is annealed to construct an active region, and an oxide generated during the annealing process is removed.
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