| 摘要 |
PURPOSE: A mask for forming a pattern of a semiconductor device is provided to minimize rounding in a corner portion of a resist pattern, by preventing a pattern from being varied in an exposure process even if integration of the semiconductor device increases. CONSTITUTION: A mask for forming a pattern of a semiconductor device includes a plurality of chrome patterns(11,12) of a predetermined shape formed on a quartz substrate(10). The chrome pattern has a dense portion or separated portion with/from another pattern. An auxiliary pattern(13) is adhered to an edge portion of an end part of the chrome pattern formed in the dense portion.
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