| 摘要 |
PURPOSE: A repairing device of a semiconductor memory device is provided to reduce the power of a laser used in cutting a fuse by reducing the width of a conductive material to prevent the damage of a device by the laser. CONSTITUTION: The repairing device includes a signal line, a precharging unit(100), an inverting/latching unit, first and second transistors(400,600), a fuse and a floating preventing unit(500). The precharging unit precharges a signal line to a logic "high". The inverting/latching unit outputs a control signal to select a normal cell or a redundant cell by inverting/latching a signal loaded to the signal line. The source-drain path of the first transistor is arranged between any node of the signal line and a ground power terminal of the signal line. The fuse is arranged between an address signal inputting terminal and a gate terminal of the first transistor. The second transistor turns the first transistor off when the fuse is cut, and an address signal is activated and inputted to the address signal inputting terminal. The floating preventing unit prevents the gate terminal of the first transistor from being floated when the fuse is cut and the address signal is inactivated.
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